专题:Semiconductor Quantum Structures and Devices

This cluster of papers focuses on the physics and applications of quantum dot devices, semiconductor materials, and single-photon sources. It covers topics such as band parameters for III–V compound semiconductors, strong coupling in quantum dot–semiconductor microcavity systems, and the generation of entangled photons from single quantum dots. The research also delves into the electronic structure of quantum dots, electrically driven single-photon sources, and the development of near-optimal single-photon sources in the solid state.
最新文献
Direct observation of massless excitons and linear exciton dispersion

article Full Text OpenAlex

Isolator-free laser operation enabled by chip-scale reflections in zero-process-change silicon-on-insulator

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Extended wavelength dilute-bismide infrared nBn photodetectors on InSb

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Engineering the Future of Transistors: A Detailed Review on the Innovations and Challenges in Uniformly Doped Tunnel Field-Effect Transistors

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Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain

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Exploring the feedback limits of quantum dot lasers for isolator-free photonic integrated circuits

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Comment on “Evolution of surface morphology from Stranski–Krastanov growth mode to step-flow growth mode in InSbBi thin films” [J. Vac. Sci. Technol. A 43, 052701 (2025)]

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Impact of IRS Random Scatterings on NLOS-V2X Channel Characteristics

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Semi-quantitative and atomistic etch thermodynamics of nanoscale dislocations in free-standing GaN crystals via Fenton reaction

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Controlling coherence between waveguide-coupled quantum dots

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近5年高被引文献
Semiconductor spin qubits

article Full Text OpenAlex 598 FWCI120.0167

Quantum Size Effect in Three-Dimensional Microscopic Semiconductor Crystals

article Full Text OpenAlex 502 FWCI13.4818

Deep Centers in Semiconductors

book Full Text OpenAlex 493 FWCI0

IEEE Journal of Selected Topics in Quantum Electronics

paratext Full Text OpenAlex 482 FWCI0

Review of: "The field-effect tunneling transistor nMOS, as an alternative to conventional CMOS by enabling the voltage supply (VDD) with ultra-low power consumption,"

preprint Full Text OpenAlex 469 FWCI173.14001368

Review of: "nMOS instead of exhibiting thermionic emission modulation, changes through a quantum tunnel modulation 12> They change through a dam."

preprint Full Text OpenAlex 436 FWCI240.08583179

The 2023 terahertz science and technology roadmap

article Full Text OpenAlex 432 FWCI56.9204

Review: Quantum Dot Light-Emitting Diodes

review Full Text OpenAlex 411 FWCI39.8009

Silicon‐Germanium Heterojunction Bipolar Transistors

other Full Text OpenAlex 325 FWCI0

Prospects and applications of on-chip lasers

review Full Text OpenAlex 262 FWCI34.5864