专题：Silicon Carbide Semiconductor Technologies

This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.
最新文献
Optimization Study of Thermal Management of Domestic SiC Power Semiconductor Based on Improved Genetic Algorithm

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A 600-V Half-Bridge Gate Drive Circuit with High-Speed and High-Noise-Immunity Level Shifter

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Properties of semiconducting silicon carbide nanoribbons under hydrogenation effects: A comprehensive first-principles study

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Processor-in-the-Loop Validation of a Super-Twisting Algorithm for Enhanced Direct Power Control of a Variable-Speed DFIG Using dSPACE 1104 Controller Board

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Optimizing control strategies for DC-DC boost converters: Real-time application of an adaptive gain scheduled ISA-PI controller with hybrid state-space and linear parameter-varying modelling

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An Enhanced Integrated Optimization Strategy for Wide ZVS Operation and Reduced Current Stress Across the Full Load Range in DAB Converters

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Systematic Efficiency-Density Co-Optimization of 100 kW GaN Traction Inverter: Methodology and Integration

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A Converter-Level Junction Temperature Monitoring Method for IGBT Based on the Turn-off Gate Electric Quantities

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The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide

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Gold Nanoparticle-Decorated Bamboo-Like 4H-SiC Nanowire Field Emitters With Low Turn-on Field and Minimal Current Fluctuations

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近5年高被引文献
Materials Science Forum

paratext Full Text OpenAlex 2184 FWCI0

Principles of Power Electronics

book Full Text OpenAlex 1373 FWCI16.24

Decade-long leukaemia remissions with persistence of CD4+ CAR T cells

article Full Text OpenAlex 714 FWCI99.436

Fundamentals of Modern VLSI Devices

book Full Text OpenAlex 658 FWCI17.861

Elements of Power Electronics

other Full Text OpenAlex 592 FWCI0

Galectin-9 interacts with PD-1 and TIM-3 to regulate T cell death and is a target for cancer immunotherapy

article Full Text OpenAlex 475 FWCI36.329

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

review Full Text OpenAlex 227 FWCI3.251

Immunogenicity of CAR T cells in cancer therapy

review Full Text OpenAlex 226 FWCI6.786

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

article Full Text OpenAlex 207 FWCI17.92

Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors

article Full Text OpenAlex 195 FWCI69.187