Semiconductor materials and devices -- 专题文献

近5年高被引文献

A step-by-step guide to perform x-ray photoelectron spectroscopy

article Full Text OpenAlex 715 FWCI55.6719

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

preprint Full Text OpenAlex 605 FWCI81.0912

Semiconductor spin qubits

article Full Text OpenAlex 598 FWCI120.0167

Review on surface-characterization applications of X-ray photoelectron spectroscopy (XPS): Recent developments and challenges

article Full Text OpenAlex 583 FWCI43.0229

The fundamentals and applications of ferroelectric HfO2

review Full Text OpenAlex 580 FWCI49.2905

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

preprint Full Text OpenAlex 500 FWCI184.58423634

The future transistors

review Full Text OpenAlex 490 FWCI64.7654

Coulomb interaction in thin semiconductor and semimetal films

book-chapter Full Text OpenAlex 470 FWCI120.3104

Review of: "The field-effect tunneling transistor nMOS, as an alternative to conventional CMOS by enabling the voltage supply (VDD) with ultra-low power consumption,"

preprint Full Text OpenAlex 469 FWCI173.14001368

Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"

preprint Full Text OpenAlex 468 FWCI77.63366433

专题：Semiconductor materials and devices

最新文献

First Demonstration of CFET Ring Oscillator and SRAM Bit-Cell Functionality at Gate Pitch Smaller Than 48 nm for Future Logic and SRAM Technology

Atomic Layer Deposition on Particulate Materials from 1988 through 2023: A Quantitative Review of Technologies, Materials, and Applications

Thin Films for Next Generation Technologies: A Comprehensive Review of Fundamentals, Growth, Deposition Strategies, Applications, and Emerging Frontiers

Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts

Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization

Thermochemical Crosstalk in Si‐C Anodes: Mechanism and Stabilization via a Polymerizable Phosphorus‐Based Additive

Engineering Multifunctional Binders for Micro‐Silicon Anodes: Mechanisms, Strategies, and Applications

Metallurgical refractory lining-guided inorganic binder for stable lithium storage in silicon microparticle anodes

Charge Disproportionation at Twisted SrTiO ₃ Bilayer Interface Driven by Local Atomic Registry

Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

近5年高被引文献

A step-by-step guide to perform x-ray photoelectron spectroscopy

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

Semiconductor spin qubits

Review on surface-characterization applications of X-ray photoelectron spectroscopy (XPS): Recent developments and challenges

The fundamentals and applications of ferroelectric HfO2

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

The future transistors

Coulomb interaction in thin semiconductor and semimetal films

Review of: "The field-effect tunneling transistor nMOS, as an alternative to conventional CMOS by enabling the voltage supply (VDD) with ultra-low power consumption,"

Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"

专题：Semiconductor materials and devices

最新文献

First Demonstration of CFET Ring Oscillator and SRAM Bit-Cell Functionality at Gate Pitch Smaller Than 48 nm for Future Logic and SRAM Technology

Atomic Layer Deposition on Particulate Materials from 1988 through 2023: A Quantitative Review of Technologies, Materials, and Applications

Thin Films for Next Generation Technologies: A Comprehensive Review of Fundamentals, Growth, Deposition Strategies, Applications, and Emerging Frontiers

Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts

Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization

Thermochemical Crosstalk in Si‐C Anodes: Mechanism and Stabilization via a Polymerizable Phosphorus‐Based Additive

Engineering Multifunctional Binders for Micro‐Silicon Anodes: Mechanisms, Strategies, and Applications

Metallurgical refractory lining-guided inorganic binder for stable lithium storage in silicon microparticle anodes

Charge Disproportionation at Twisted SrTiO 3 Bilayer Interface Driven by Local Atomic Registry

Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

近5年高被引文献

A step-by-step guide to perform x-ray photoelectron spectroscopy

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

Semiconductor spin qubits

Review on surface-characterization applications of X-ray photoelectron spectroscopy (XPS): Recent developments and challenges

The fundamentals and applications of ferroelectric HfO2

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

The future transistors

Coulomb interaction in thin semiconductor and semimetal films

Review of: "The field-effect tunneling transistor nMOS, as an alternative to conventional CMOS by enabling the voltage supply (VDD) with ultra-low power consumption,"

Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"

Charge Disproportionation at Twisted SrTiO ₃ Bilayer Interface Driven by Local Atomic Registry