Advancements in Semiconductor Devices and Circuit Design -- 专题文献

近5年高被引文献

The Physics of Semiconductor Devices

book Full Text OpenAlex 4049 FWCI31.1345

Suppressing quantum errors by scaling a surface code logical qubit

article Full Text OpenAlex 980 FWCI169.1755

IEEE Transactions on Circuits and Systems II: Express Briefs

paratext Full Text OpenAlex 656 FWCI0

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

preprint Full Text OpenAlex 605 FWCI81.0912

Review of: "(Field effect nano transistors) Nano transistor electronic quantity"

preprint Full Text OpenAlex 530 FWCI87.91846602

Quantum logic with spin qubits crossing the surface code threshold

article Full Text OpenAlex 500 FWCI72.6493

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

preprint Full Text OpenAlex 500 FWCI184.58423634

Review of: "transistor nMOS (with ultra-low power consumption, energy-efficient computing, during the sub-threshold range)"

preprint Full Text OpenAlex 498 FWCI108.9876

Deep Centers in Semiconductors

book Full Text OpenAlex 493 FWCI0

The future transistors

review Full Text OpenAlex 490 FWCI64.7654

专题：Advancements in Semiconductor Devices and Circuit Design

最新文献

Engineering the Future of Transistors: A Detailed Review on the Innovations and Challenges in Uniformly Doped Tunnel Field-Effect Transistors

Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain

First Demonstration of CFET Ring Oscillator and SRAM Bit-Cell Functionality at Gate Pitch Smaller Than 48 nm for Future Logic and SRAM Technology

Quantum lattice Boltzmann method for simulating nonlinear fluid dynamics

Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling

Computational design of two‐dimensional MA ₂ Z ₄ family field‐effect transistor for future Ångström‐scale CMOS technology nodes

A 4T1C Cryogenic Inverse CMOS Memristor Emulator For Quantum Computing Application

Scalable nonlithographic in-plane directional growth of millimeter-scale silicon nanowire arrays on glass substrates

Pulsed Characterization of GaN-HEMTs - Impact of Charge Trapping

Experimentally motivated order of length scales affect shot noise

近5年高被引文献

The Physics of Semiconductor Devices

Suppressing quantum errors by scaling a surface code logical qubit

IEEE Transactions on Circuits and Systems II: Express Briefs

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

Review of: "(Field effect nano transistors) Nano transistor electronic quantity"

Quantum logic with spin qubits crossing the surface code threshold

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

Review of: "transistor nMOS (with ultra-low power consumption, energy-efficient computing, during the sub-threshold range)"

Deep Centers in Semiconductors

The future transistors

专题：Advancements in Semiconductor Devices and Circuit Design

最新文献

Engineering the Future of Transistors: A Detailed Review on the Innovations and Challenges in Uniformly Doped Tunnel Field-Effect Transistors

Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain

First Demonstration of CFET Ring Oscillator and SRAM Bit-Cell Functionality at Gate Pitch Smaller Than 48 nm for Future Logic and SRAM Technology

Quantum lattice Boltzmann method for simulating nonlinear fluid dynamics

Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling

Computational design of two‐dimensional MA 2 Z 4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

A 4T1C Cryogenic Inverse CMOS Memristor Emulator For Quantum Computing Application

Scalable nonlithographic in-plane directional growth of millimeter-scale silicon nanowire arrays on glass substrates

Pulsed Characterization of GaN-HEMTs - Impact of Charge Trapping

Experimentally motivated order of length scales affect shot noise

近5年高被引文献

The Physics of Semiconductor Devices

Suppressing quantum errors by scaling a surface code logical qubit

IEEE Transactions on Circuits and Systems II: Express Briefs

Review of: "(Field effect nano transistors) Nano transistor electronic quantity and ionization potential)"

Review of: "(Field effect nano transistors) Nano transistor electronic quantity"

Quantum logic with spin qubits crossing the surface code threshold

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

Review of: "transistor nMOS (with ultra-low power consumption, energy-efficient computing, during the sub-threshold range)"

Deep Centers in Semiconductors

The future transistors

Computational design of two‐dimensional MA ₂ Z ₄ family field‐effect transistor for future Ångström‐scale CMOS technology nodes