Semiconductor materials and interfaces -- 专题文献

近5年高被引文献

Review of: "Oligophenylene vanillin (silicon/germanium ) structured nanowires and cylinders for possible applications in electronic energy"

preprint Full Text OpenAlex 606 FWCI80.6951

Handbook of Semiconductors

book Full Text OpenAlex 593 FWCI29.9128

Journal of Materials Chemistry A

paratext Full Text OpenAlex 519 FWCI0

Anion‐Doping‐Induced Vacancy Engineering of Cobalt Sulfoselenide for Boosting Electromagnetic Wave Absorption

article Full Text OpenAlex 249 FWCI14.6411

High-entropy doping promising ultrahigh-Ni Co-free single-crystalline cathode toward commercializable high-energy lithium-ion batteries

article Full Text OpenAlex 197 FWCI42.6306

Ultrahigh‐Voltage LiCoO₂ at 4.7 V by Interface Stabilization and Band Structure Modification

article Full Text OpenAlex 185 FWCI24.4831

The Energy Level Conundrum of Organic Semiconductors in Solar Cells

article Full Text OpenAlex 185 FWCI16.1308

Investigating and analyzing the degree of order and dimensions of nanowires produced using templates

preprint Full Text OpenAlex 174 FWCI61.0951

Advancements in Photovoltaic Cell Materials: Silicon, Organic, and Perovskite Solar Cells

article Full Text OpenAlex 162 FWCI34.8807

Crystal Growth Promotion and Defects Healing Enable Minimum Open‐Circuit Voltage Deficit in Antimony Selenide Solar Cells

article Full Text OpenAlex 159 FWCI14.004

专题：Semiconductor materials and interfaces

最新文献

Dependence of Mo/Au Transition-Edge Sensor Properties on Normal Resistance and Critical Temperature

A computational study for screening high-selectivity inhibitors in area-selective atomic layer deposition on amorphous surfaces

Strengthening Tungsten Diboride toward a Superhard Material by Ordered Vacancy Pairs

**Comparative Electrical and Photoresponse Investigation of the Au/PVA/n - Si ( MPS1 ) and Au/(CdTe:PVA)/n-Si ( MPS2 ) Photodiodes, Both in the Dark and under Illumination**

Selenium-assisted surface enhancement single-crystal PbSe/Ge heterojunctions for a high detectivity uncooled mid infrared wavelength photovoltaic detector

Effects of In Situ and Ex Situ Heat Treatment on Microstructural Features of Mo/CZTS Heterojunction Using X‐Ray Diffraction Technique

On the electrical parameters, conduction mechanisms depend on temperature and voltage, and thermal sensor applications in the Re/n‑GaAs/Au Schottky diodes

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga ₂ O ₃ MOSFETs

Efficiency enhancement of CdTe solar cells using Cu2MnSnS4 back contact layer: - Experimental and numerical analysis

Development of Cryogenic X-Ray Detectors Based on Mo/Au TES

近5年高被引文献

Review of: "Oligophenylene vanillin (silicon/germanium ) structured nanowires and cylinders for possible applications in electronic energy"

Handbook of Semiconductors

Journal of Materials Chemistry A

Anion‐Doping‐Induced Vacancy Engineering of Cobalt Sulfoselenide for Boosting Electromagnetic Wave Absorption

High-entropy doping promising ultrahigh-Ni Co-free single-crystalline cathode toward commercializable high-energy lithium-ion batteries

Ultrahigh‐Voltage LiCoO₂ at 4.7 V by Interface Stabilization and Band Structure Modification

The Energy Level Conundrum of Organic Semiconductors in Solar Cells

Investigating and analyzing the degree of order and dimensions of nanowires produced using templates

Advancements in Photovoltaic Cell Materials: Silicon, Organic, and Perovskite Solar Cells

Crystal Growth Promotion and Defects Healing Enable Minimum Open‐Circuit Voltage Deficit in Antimony Selenide Solar Cells

专题：Semiconductor materials and interfaces

最新文献

Dependence of Mo/Au Transition-Edge Sensor Properties on Normal Resistance and Critical Temperature

A computational study for screening high-selectivity inhibitors in area-selective atomic layer deposition on amorphous surfaces

Strengthening Tungsten Diboride toward a Superhard Material by Ordered Vacancy Pairs

Comparative Electrical and Photoresponse Investigation of the Au/PVA/n - Si ( MPS1 ) and Au/(CdTe:PVA)/n-Si ( MPS2 ) Photodiodes, Both in the Dark and under Illumination

Selenium-assisted surface enhancement single-crystal PbSe/Ge heterojunctions for a high detectivity uncooled mid infrared wavelength photovoltaic detector

Effects of In Situ and Ex Situ Heat Treatment on Microstructural Features of Mo/CZTS Heterojunction Using X‐Ray Diffraction Technique

On the electrical parameters, conduction mechanisms depend on temperature and voltage, and thermal sensor applications in the Re/n‑GaAs/Au Schottky diodes

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga 2 O 3 MOSFETs

Efficiency enhancement of CdTe solar cells using Cu2MnSnS4 back contact layer: - Experimental and numerical analysis

Development of Cryogenic X-Ray Detectors Based on Mo/Au TES

近5年高被引文献

Review of: "Oligophenylene vanillin (silicon/germanium ) structured nanowires and cylinders for possible applications in electronic energy"

Handbook of Semiconductors

Journal of Materials Chemistry A

Anion‐Doping‐Induced Vacancy Engineering of Cobalt Sulfoselenide for Boosting Electromagnetic Wave Absorption

High-entropy doping promising ultrahigh-Ni Co-free single-crystalline cathode toward commercializable high-energy lithium-ion batteries

Ultrahigh‐Voltage LiCoO2 at 4.7 V by Interface Stabilization and Band Structure Modification

The Energy Level Conundrum of Organic Semiconductors in Solar Cells

Investigating and analyzing the degree of order and dimensions of nanowires produced using templates

Advancements in Photovoltaic Cell Materials: Silicon, Organic, and Perovskite Solar Cells

Crystal Growth Promotion and Defects Healing Enable Minimum Open‐Circuit Voltage Deficit in Antimony Selenide Solar Cells

**Comparative Electrical and Photoresponse Investigation of the Au/PVA/n - Si ( MPS1 ) and Au/(CdTe:PVA)/n-Si ( MPS2 ) Photodiodes, Both in the Dark and under Illumination**

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga ₂ O ₃ MOSFETs

Ultrahigh‐Voltage LiCoO₂ at 4.7 V by Interface Stabilization and Band Structure Modification