专题:Ferroelectric and Negative Capacitance Devices

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.
最新文献
The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

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Enhancing SNN-based spatio-temporal learning: A benchmark dataset and Cross-Modality Attention model

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Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption

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Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

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AI for dielectric capacitors

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Attojoule Hexagonal Boron Nitride‐Based Memristor for High‐Performance Neuromorphic Computing

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High-Performance WS2 MOSFETs with Bilayer WS2 Contacts

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Excellent low-E energy storage and fluorescence temperature sensing features in Bi0.5Na0.5TiO3-based transparent ceramics

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Design Space Optimization for Eradication of NDR Effect in Dielectric/Ferroelectric-Stacked Negative Capacitance Multigate FETs at Sub-3 nm Technology for Digital/ Analog/RF Applications

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An Ultra-Low Cost and Multicast-Enabled Asynchronous NoC for Neuromorphic Edge Computing

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近5年高被引文献
Promises and prospects of two-dimensional transistors

review Full Text OpenAlex 1115 FWCI67.9716317

Opportunities for neuromorphic computing algorithms and applications

article Full Text OpenAlex 872 FWCI93.8679401

Modified MAX Phase Synthesis for Environmentally Stable and Highly Conductive Ti 3 C 2 MXene

article Full Text OpenAlex 810 FWCI49.44915253

Transistors based on two-dimensional materials for future integrated circuits

article Full Text OpenAlex 806 FWCI52.07504825

A Survey on Hallucination in Large Language Models: Principles, Taxonomy, Challenges, and Open Questions

article Full Text OpenAlex 743 FWCI474.612462

A compute-in-memory chip based on resistive random-access memory

article Full Text OpenAlex 670 FWCI72.1233026

P-Tuning: Prompt Tuning Can Be Comparable to Fine-tuning Across Scales and Tasks

article Full Text OpenAlex 637 FWCI124.72384853

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

review Full Text OpenAlex 569 FWCI61.25098385

Embedded Devices for Neuromorphic Time-Series Assessment

article Full Text OpenAlex 565 FWCI0

Vertical MoS2 transistors with sub-1-nm gate lengths

article Full Text OpenAlex 557 FWCI68.51186613