专题:Ferroelectric and Negative Capacitance Devices

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.
最新文献
Two-dimensional indium selenide wafers for integrated electronics

article Full Text OpenAlex

A Review on Resistive RAM: From Material Properties to Switching Characteristics, Reliability, Models and Applications

review Full Text OpenAlex

Unveiling interfacial dead layer in wurtzite ferroelectrics

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Gate-Tunable Polarization Gradient in 2D Polar Semiconductor for Synaptic Transistor

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Flexible Zr-doped hafnium oxide ferroelectric memcapacitive synaptic devices for neuromorphic computing

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Ion-Assisted Nanoscale Material Engineering in Atomic Layers

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2025 IEEE International Memory Workshop (IMW)

paratext Full Text OpenAlex

Etching Duration as a Key Parameter for Tailoring Ti3C2Tx MXene Electrochemical Properties

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Advances in Resistive Switching Memory: Comprehensive Insights into ECM Mechanisms through TEM Observations and Analysis

article Full Text OpenAlex

HfAlOx-based optical ferroelectric memristor with transparent electrode for RGB color image classification via physical reservoir

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近5年高被引文献
Promises and prospects of two-dimensional transistors

review Full Text OpenAlex 974 FWCI14.338

Modified MAX Phase Synthesis for Environmentally Stable and Highly Conductive Ti3C2 MXene

article Full Text OpenAlex 736 FWCI42.453

Transistors based on two-dimensional materials for future integrated circuits

article Full Text OpenAlex 716 FWCI44.461

Opportunities for neuromorphic computing algorithms and applications

article Full Text OpenAlex 667 FWCI62.765

A compute-in-memory chip based on resistive random-access memory

article Full Text OpenAlex 524 FWCI49.104

P-Tuning: Prompt Tuning Can Be Comparable to Fine-tuning Across Scales and Tasks

article Full Text OpenAlex 514 FWCI64.335

2022 roadmap on neuromorphic computing and engineering

article Full Text OpenAlex 500 FWCI46.238

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

review Full Text OpenAlex 499 FWCI13.432

Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"

preprint Full Text OpenAlex 499 FWCI0

Vertical MoS2 transistors with sub-1-nm gate lengths

article Full Text OpenAlex 486 FWCI40.257