专题:Ferroelectric and Negative Capacitance Devices

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.
最新文献
Neuromorphic Computing and Extended Memory

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Kesterite CZTS-based RRAM device for neuromorphic applications

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Recent progress on integrated neuromorphic chips

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A flexible digital compute-in-memory chip for edge intelligence

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In-sensor polychromatic visual information processing enabled by all-optical controlled neuromorphic devices

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Constructing superrelaxor critical state towards giant energy storage in lead-free dielectric ceramics

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Complementary Photoresponse in van der Waals Heterostructures for Insect-Inspired Neuromorphic Vision

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Oscillatory control of cortical space as a computational dimension

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Расширенные расчёты энтропии в гипотезе Acta Universi

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Breaking the memory wall: next-generation artificial intelligence hardware

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近5年高被引文献
A Survey on Hallucination in Large Language Models: Principles, Taxonomy, Challenges, and Open Questions

article Full Text OpenAlex 1119 FWCI399.6844

Opportunities for neuromorphic computing algorithms and applications

article Full Text OpenAlex 963 FWCI84.2249

A compute-in-memory chip based on resistive random-access memory

article Full Text OpenAlex 756 FWCI64.8608

P-Tuning: Prompt Tuning Can Be Comparable to Fine-tuning Across Scales and Tasks

article Full Text OpenAlex 689 FWCI91.5032

Autonomous chemical research with large language models

article Full Text OpenAlex 686 FWCI66.4317

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

review Full Text OpenAlex 625 FWCI53.5555

Embedded Devices for Neuromorphic Time-Series Assessment

article Full Text OpenAlex 604 FWCI0

Vertical MoS2 transistors with sub-1-nm gate lengths

article Full Text OpenAlex 595 FWCI42.4839

The fundamentals and applications of ferroelectric HfO2

review Full Text OpenAlex 580 FWCI49.2905

A crossbar array of magnetoresistive memory devices for in-memory computing

article Full Text OpenAlex 562 FWCI49.8684